| Modulekode | ENE 410 |
| Kwalifikasie | Undergraduate |
| Fakulteit | Faculty of Engineering, Built Environment and Information Technology |
| Module-inhoud | This module covers bipolar and Field Effect Transistor (FET) amplifier design (bias and frequency response of small-signal loaded single-stage, multistage, differential stage, and feedback amplifiers), amplifier figure of merit parameters, including total harmonic distortion, large-signal power amplifiers, and communication electronics (RF component modelling, two-port models for RF networks, matching networks, small-signal narrowband RF amplifiers). |
| Modulekrediete | 16.00 |
| NQF Level | 08 |
| Programme | |
| Prerequisites | ENE 310 GS |
| Contact time | 1 practical per week, 1 tutorial per week, 3 lectures per week |
| Language of tuition | Module is presented in English |
| Department | Electrical, Electronic and Computer Engineering |
| Period of presentation | Semester 1 |
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